inchange semiconductor isc product specification isc website www.iscsemi.cn isc triacs BTA08-600A features with to-220ab insulated package suitables for general purpose applicati ons where gate high sensitivity is required. application on 4q such as phase control and st atic switching. absolute maximum ratings(ta=25 ) symbol parameter min unit v drm repetitive peak off-state voltage 600 v v rrm repetitive peak reverse voltage 600 v i t(rms) rms on-state current (full sine wave)t j =105 8 a i tsm non-repetitive peak on-state current t p =20ms 80 a t j operating junction temperature 110 t stg storage temperature -45~150 r th(j-c) thermal resistance, junction to case 2.5 /w r th(j-a) thermal resistance, junction to ambient 60 /w electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions max unit i rrm repetitive peak reverse current v r =v rrm , v r =v rrm , tj=110 0.01 0.5 ma i drm repetitive peak off-state current v d =v drm , v d =v drm , tj=110 0.01 0.5 ma i gt gate trigger current v d =12v; r l = 30 10 ma 10 10 25 i h holding current i gt = 0.1a, gate open 25 ma v gt gate trigger voltage all quadrant v d =12v; r l = 30 1.5 v v tm on-state voltage i t = 11a; t p = 380 s 1.75 v
|
